| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
95 pcs
|
95 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name |
The ON Semiconductor H11A1SR2M is a transistor output optocoupler designed for various electronic applications. It provides a high isolation voltage of 7500 Vrms, ensuring reliable separation between input and output circuits.
Key electrical specifications include a forward current of 60 mA, a forward voltage of 1.5 V, and a maximum collector emitter voltage of 30 V. The device features an NPN phototransistor output type and operates with a maximum power dissipation of 150 mW.
This optocoupler is suitable for a wide range of operating temperatures, from -40°C to +100°C. It is supplied in a SMD - DIP - 6 package, with dimensions of 3.53 mm in height, 8.89 mm in length, and 6.6 mm in width. The packaging is available on cut tape, with a factory pack quantity of 1000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The H11A1SR2M has an isolation voltage rating of 7500 vRMS.
The H11A1SR2M operates over a temperature range of -40 °C to +100 °C.
The H11A1SR2M is available in an SMD-DIP-6 package.
The H11A1SR2M has a forward current rating of 60 mA.
The maximum collector-emitter voltage is 30 V.
The output type is an NPN phototransistor.