SUD50N04-13P
Vishay
The Vishay Dale SUD50N04-13P is an N-Channel MOSFET with a 40V drain-source breakdown voltage and a continuous drain current of 50A. It is supplied in a TO-252 package.
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27 pcs
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27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies H10T120 is a power semiconductor component belonging to the Soft Switching Series. It utilizes TrenchStop and Fieldstop technology for 1200V applications, offering very tight parameter distribution, high ruggedness, and temperature-stable behavior. This IGBT is designed for soft switching applications and induction heating.
Key electrical specifications include a maximum collector-emitter voltage of 1200V and a maximum DC collector current of 16A at 25°C, decreasing to 10A at 100°C. It also features a fast recovery anti-parallel EmCon HE diode. The device has a maximum operating junction temperature of 150°C and is housed in a PG-TO-220-3-1 package.
Designed for application-specific optimization, the H10T120 offers easy parallel switching capability due to a positive temperature coefficient in VCE(sat) and very low VCE(sat) values. It also boasts low EMI and is qualified according to JEDEC standards for target applications. The component is Pb-free and RoHS compliant.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the H10T120 is 1200V.
The maximum DC collector current at 25°C for the H10T120 is 16A.
The H10T120 is supplied in a PG-TO-220-3-1 package.
The operating junction temperature range for the H10T120 is -40°C to 150°C.
The short circuit withstand time for the H10T120 is 10µs.
The collector-emitter saturation voltage at Tj=25°C is a maximum of 1.7V.
The gate-emitter threshold voltage for the H10T120 is typically 5.8V.
