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258 pcs
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258 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS GWM100-01X1 is a 6 N-Channel MOSFET module belonging to the FETs - Modules family. It is designed for robust performance with a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 90A at 25°C. The module exhibits a low on-resistance (Rds On) of 8.5 mOhm at 80A and 10V, indicating efficient power handling capabilities.
This MOSFET module features a gate charge (Qg) of 90nC at 10V and a gate threshold voltage (Vgs(th)) of 4.5V maximum at 250µA. It is housed in a 17-SMD, Flat Leads package and is designed for surface mounting, making it suitable for various industrial automation and process automation applications. The component is supplied in a tube package.
Key electrical characteristics include a 100V drain-to-source voltage and a 90A continuous drain current. The low Rds(on) of 8.5 mOhm at 80A, 10V is crucial for minimizing power loss and heat generation in high-current applications. The surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the GWM100-01X1 is 100V.
The continuous drain current (Id) for the GWM100-01X1 at 25°C is 90A.
The maximum Rds On for the GWM100-01X1 at 80A and 10V is 8.5 mOhm.
The maximum gate threshold voltage (Vgs(th)) for the GWM100-01X1 is 4.5V at 250µA.
The GWM100-01X1 is a 6 N-Channel (3-Phase Bridge) MOSFET.
The GWM100-01X1 MOSFET module is supplied in a 17-SMD, Flat Leads package and is designed for surface mounting.