| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,415 pcs
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13415 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The Toshiba GT5G131 is an N-CHANNEL Insulated Gate Bipolar Transistor (IGBT) designed for various electronic applications. It offers a maximum collector current (IC) of 5 A and a maximum collector-emitter voltage of 400 V. This component features a single element configuration with an integrated diode, constructed using silicon.
The IGBT is housed in a small outline package, specifically the 2-6J1C, 8-PIN type, suitable for surface mounting. The package body is made of plastic/epoxy with a rectangular shape and gull wing terminal form. The terminal finish is tin lead. The transistor operates as an insulated gate bipolar transistor.
Key electrical characteristics include a nominal turn-on time of 1400 ns and a nominal turn-off time of 1800 ns. The channel type is N-CHANNEL, and the transistor element material is SILICON. This component is designed for reliable performance in its intended applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the GT5G131 is 5 A.
The maximum collector-emitter voltage for the GT5G131 is 400 V.
The GT5G131 is an N-CHANNEL Insulated Gate Bipolar Transistor (IGBT).
The GT5G131 is supplied in a 2-6J1C, 8-PIN small outline package suitable for surface mounting.
The nominal turn-on time is 1400 ns and the nominal turn-off time is 1800 ns.