| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,342 pcs
|
1342 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
345 pcs
|
345 pcs | On Request | 1 | On Request | On Request | 0547+ | On Request | On Request |
| Category | |
| Manufacturer Name |
This Toshiba GT5G131 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for various industrial applications. It offers a robust collector-emitter voltage rating of 400V and can handle a maximum collector current of 5A.
The device is configured as a single element with an integrated diode, simplifying circuit design. It is constructed with a silicon transistor element and housed in a plastic/epoxy package.
The GT5G131 is designed for surface mounting, utilizing a gull-wing terminal form and dual terminal position. Its small outline rectangular package makes it suitable for space-constrained applications. The nominal turn-on time is 1400 ns, and the nominal turn-off time is 1800 ns.
This component is manufactured by Toshiba America Electronic Components, Inc. and is suitable for applications requiring reliable power switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the GT5G131 is 400 V.
The GT5G131 has a maximum collector current of 5 A.
The GT5G131 is an N-Channel IGBT.
Yes, the GT5G131 is configured as a single element with a built-in diode.
The GT5G131 is supplied in a 2-6J1C small outline package suitable for surface mounting.
The nominal turn-on time (ton) for the GT5G131 is 1400 ns, and the nominal turn-off time (toff) is 1800 ns.