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GT30J301 The Toshiba GT30J301 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power control applications. It features a 600V collector-emitter voltage and a 30A maximum collector current.
Mfr Part #:

GT30J301

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba GT30J301 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power control applications. It features a 600V collector-emitter voltage and a 30A maximum collector current.
✓ Total Stock: 2,338 pcs
$ Price Range: $1.88

GT30J301 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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2,338 pcs
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2338 pcs On Request 1 On Request On Request On Request On Request On Request
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GT30J301 Specifications Quick View

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GT30J301 Description

Short technical summary and product information.

The Toshiba GT30J301 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) suitable for power control applications. This component offers a maximum collector-emitter voltage of 600V and a maximum collector current of 30A.

 

Key electrical characteristics include a nominal turn-on time of 400ns and a nominal turn-off time of 700ns. The transistor is constructed with silicon and features an integrated diode.

 

Packaged in a rectangular, flange mount configuration with 3 terminals, the GT30J301 utilizes a plastic/epoxy body. It is designed for through-hole mounting.

 

This IGBT is part of Toshiba's offering for industrial automation and process automation sectors.

GT30J301 Quick Information

Product Type: N-Channel IGBT
Canonical Name: Toshiba GT30J301 N-Channel IGBT
Subcategory: Special Purpose

GT30J301 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

GT30J301 Estimated Pricing

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1+ $1.88 $1.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

GT30J301 Features

  • 600V collector-emitter voltage rating.
  • 30A maximum collector current.
  • N-Channel Insulated Gate Bipolar Transistor.
  • Includes built-in diode for convenience.
  • Flange mount, through-hole package.

GT30J301 Applications

  • Suitable for power control circuits.
  • Used in industrial automation systems.
  • Applicable to process automation.
  • Designed for high-power switching.

GT30J301 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the GT30J301?

The maximum collector current (IC) for the GT30J301 is 30 A.

What is the maximum collector-emitter voltage of the GT30J301?

The maximum collector-emitter voltage for the GT30J301 is 600 V.

What type of transistor is the GT30J301?

The GT30J301 is an N-Channel Insulated Gate Bipolar Transistor (IGBT).

What is the package type for the GT30J301?

The GT30J301 is supplied in a 2-16C1C package with a flange mount.

What is the RoHS status of the GT30J301?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the GT30J301?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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