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GT30J124 The Toshiba GT30J124 is an IGBT (Insulated Gate Bipolar Transistor). It combines MOSFET and bipolar transistor advantages for high-voltage applications.
Mfr Part #:

GT30J124

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba GT30J124 is an IGBT (Insulated Gate Bipolar Transistor). It combines MOSFET and bipolar transistor advantages for high-voltage applications.
✓ Total Stock: 50 pcs
$ Price Range: $0.10

GT30J124 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
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50 pcs
On Request
50 pcs On Request 1 On Request On Request On Request On Request On Request
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GT30J124 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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GT30J124 Description

Short technical summary and product information.

The Toshiba GT30J124 is an Insulated Gate Bipolar Transistor (IGBT). This component merges the high input impedance characteristic of MOSFETs with the high-voltage drive capability of bipolar transistors.

 

IGBTs are power semiconductor devices used in a wide range of applications requiring efficient switching and power handling. The GT30J124's design allows for robust performance in demanding electrical environments.

 

Further details regarding specific electrical characteristics, package type, and operating conditions would typically be found in the manufacturer's datasheet.

GT30J124 Quick Information

Product Type: IGBT
Canonical Name: GT30J124 IGBT
Subcategory: Discrete IGBTs

GT30J124 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

GT30J124 Estimated Pricing

Qty Low High
1+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

GT30J124 Features

  • Combines MOSFET high input impedance with bipolar drive.
  • Designed as an Insulated Gate Bipolar Transistor (IGBT).
  • Part of Toshiba's semiconductor product line.
  • Related to high-voltage switching applications.
  • Category reassigned to mica and PTFE capacitors.

GT30J124 Applications

  • Suitable for high-voltage switching applications.
  • Used in power conversion and motor drives.
  • Ideal for insulated gate bipolar transistor circuits.
  • Applicable in industrial inverter systems.
  • Suitable for high-speed switching in power electronics.

GT30J124 FAQs

5 frequently asked questions generated from this part’s specifications.
What is an IGBT?

An IGBT (Insulated Gate Bipolar Transistor) combines the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

What are the key features of the GT30J124?

The GT30J124 is an IGBT that combines MOSFET high input impedance with bipolar transistor high-voltage drive.

What is the RoHS status of the GT30J124?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the GT30J124?

The Moisture Sensitivity Level is 1 Unlimited.

What is the REACH status for the GT30J124?

The REACH status is REACH Unaffected.

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