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GT30J122 The Toshiba GT30J122 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT). It features a Silicon technology and comes in a TO-3PF package.
Mfr Part #:

GT30J122

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba GT30J122 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT). It features a Silicon technology and comes in a TO-3PF package.
✓ Total Stock: 8,515 pcs
$ Price Range: $0.99

GT30J122 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
8,500 pcs
On Request
8500 pcs On Request 1 On Request On Request 16+ On Request On Request
Fe Components ✓
Non-Authorised Inventory information
15 pcs
On Request
15 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

GT30J122 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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GT30J122 Description

Short technical summary and product information.

The Toshiba GT30J122 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This transistor utilizes advanced silicon technology from Toshiba.

 

Key specifications include its N-Channel configuration and Silicon technology. The component is housed in a TO-3PF package, suitable for various mounting requirements.

 

This IGBT is part of the broader category of Transistors - FETs, MOSFETs - Arrays, indicating its role in power electronics and switching circuits. Its design focuses on delivering efficient power handling capabilities.

GT30J122 Quick Information

Product Type: IGBT Transistor
Canonical Name: Toshiba GT30J122 N-Channel Silicon IGBT Transistor
Subcategory: IGBT

GT30J122 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

GT30J122 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

GT30J122 Features

  • High-performance N-Channel IGBT for switching applications.
  • Designed with Toshiba's advanced silicon technology.
  • Package type is TO-3PF for high power handling.
  • Suitable for high-power switching circuits.
  • Part of Toshiba's discrete semiconductor product line.

GT30J122 Applications

  • Suitable for high-power switching applications.
  • Used in industrial motor control systems.
  • Ideal for power supply regulation circuits.
  • Applicable in renewable energy inverter systems.
  • Designed for high-efficiency power conversion.

GT30J122 FAQs

5 frequently asked questions generated from this part’s specifications.
What type of transistor is the Toshiba GT30J122?

The Toshiba GT30J122 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) made with Silicon technology.

What package is the GT30J122 available in?

The GT30J122 is available in a TO-3PF package.

What is the RoHS status of the GT30J122?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the GT30J122?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for the GT30J122?

The REACH status is REACH Unaffected.

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