| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,010 pcs
|
8010 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
355 pcs
|
355 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba GT30F123 is an Insulated Gate Bipolar Transistor (IGBT) designed for various electronic applications. IGBTs combine the high input impedance of MOSFETs with the high-voltage drive capabilities of bipolar transistors, offering efficient power switching.
This component is noted for its RoHS3 compliance, indicating adherence to environmental standards regarding hazardous substances. It also has a Moisture Sensitivity Level (MSL) of 1, meaning it has unlimited shelf life under standard conditions and requires no special handling for moisture.
The GT30F123 is part of Toshiba's discrete IGBT offerings. While specific electrical characteristics like voltage and current ratings are not detailed here, its classification as an IGBT suggests suitability for power electronics applications requiring high voltage and current handling capabilities.
Further details regarding its specific operating parameters, package type, and thermal characteristics would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The GT30F123 is RoHS3 Compliant.
The Moisture Sensitivity Level for the GT30F123 is 1 Unlimited.
The GT30F123 is REACH Unaffected.