Mfr Part #:

GT20J301

Mfr Name: Toshiba

The Toshiba GT20J301 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power control applications. It features a 600V collector-emitter voltage and a 20A collector current.

✓ Total Stock: 120 pcs

$ Price Range: $0.71

GT20J301 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	120 pcs On Request	120 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

GT20J301 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba

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GT20J301 Description

Short technical summary and product information.

The Toshiba GT20J301 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) with a maximum collector-emitter voltage of 600V and a maximum collector current of 20A. This component is configured as a single element with a built-in diode, utilizing a silicon transistor element.

Key electrical characteristics include a nominal turn-on time of 400 ns and a nominal turn-off time of 700 ns. The transistor is designed for power control applications and comes in a rectangular package with a flange mount style and through-hole termination.

The package body is made of plastic/epoxy and is described as LEAD FREE with 3 terminals. The component is classified under the N-CHANNEL type and is suitable for industrial automation and process automation sectors.

GT20J301 Quick Information

Product Type: IGBT Transistor

Canonical Name: Toshiba GT20J301 N-Channel IGBT

Subcategory: IGBT

GT20J301 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

GT20J301 Estimated Pricing

Qty	Low	High
1+	$0.71	$0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

GT20J301 Features

600V collector-emitter voltage rating.
20A maximum collector current.
N-Channel IGBT with built-in diode.
400ns turn-on, 700ns turn-off times.
Through-hole, flange mount package.

GT20J301 Applications

Suitable for power control in industrial equipment.
Used in motor drive and inverter circuits.
Ideal for high-voltage switching applications.
Applicable in renewable energy power systems.

GT20J301 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the GT20J301?

The maximum collector-emitter voltage is 600 V.

What is the maximum collector current for the GT20J301?

The maximum collector current is 20 A.

What type of transistor is the GT20J301?

The GT20J301 is an N-Channel Insulated Gate Bipolar Transistor (IGBT).

Does the GT20J301 have a built-in diode?

Yes, the GT20J301 is configured as a single element with a built-in diode.

What is the turn-on time for the GT20J301?

The nominal turn-on time is 400 ns.

What is the turn-off time for the GT20J301?

The nominal turn-off time is 700 ns.

What is the package type for the GT20J301?

The GT20J301 is supplied in a 2-16C1C package with a flange mount style and through-hole termination.