| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba GT15Q101 is a Silicon N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Toshiba. This component is rated for a maximum collector current of 15A and a collector emitter voltage of 1.2kV.
Key electrical characteristics include a maximum collector emitter saturation voltage of 4V, a rise time of 600ns, and a fall time of 500ns. The device has a maximum power dissipation of 150W.
Operating temperature ranges from a minimum of -55°C to a maximum of 150°C. The GT15Q101 is designed for through-hole mounting, making it suitable for various power switching applications where robust performance and reliability are required.
This IGBT is compliant with RoHS3 standards and has an MSL rating of 1, indicating unlimited shelf life under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current of the GT15Q101 is 15A.
The collector emitter voltage of the GT15Q101 is 1.2kV.
The GT15Q101 uses through hole mounting.
The maximum operating temperature of the GT15Q101 is 150°C.
Yes, the GT15Q101 is RoHS3 compliant.