Mfr Part #:

GT110N06D3

Name: GT110N06D3
Brand: Goford Semiconductor
SKU: GT110N06D3

Description:

N60V, 35A,RD<11M@10V,VTH1.0V~2.4

Stock on Request

GT110N06D3 Description

Short technical summary and product information.

N60V, 35A,RD<11M@10V,VTH1.0V~2.4

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	35A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1059 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	25W (Tc)
Rds On (Max) @ Id, Vgs	11mOhm @ 14A, 10V
Supplier Device Package	8-DFN (3.15x3.05)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 250µA