Mfr Part #:

GT10G131

Mfr Name: Toshiba

The Toshiba GT10G131 is an N-Channel IGBT designed for strobe flash applications. It features a 400V collector-emitter voltage and a 200A peak collector current.

✓ Total Stock: 150 pcs

$ Price Range: $0.99

GT10G131 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	150 pcs On Request	150 pcs	On Request	1	On Request	On Request	23+	On Request	On Request

GT10G131 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba

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GT10G131 Description

Short technical summary and product information.

The Toshiba GT10G131 is a silicon N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for strobe flash applications. It utilizes a 5th generation trench gate structure and operates in enhancement-mode.

Key electrical characteristics include a collector-emitter voltage (Vces) of 400V and a peak collector current (ICP) of 200A. The device supports a 4.0V gate drive voltage (Vge) for a collector current of 200A. It also features a collector-emitter saturation voltage (Vce(sat)) of 2.3V typical at 200A and 4V gate drive.

Thermal performance is managed with a junction to ambient thermal resistance of 65.8 °C/W. The maximum junction temperature is 150°C, with a storage temperature range of -55°C to 150°C.

Packaged in a standard SOP-8 surface mount package, the GT10G131 has a typical weight of 0.08g. It includes a built-in zener diode between the gate and emitter for protection.

GT10G131 Quick Information

Product Type: IGBT Transistor

Canonical Name: Toshiba GT10G131 N-Channel IGBT

Subcategory: Special Purpose

GT10G131 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

GT10G131 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

GT10G131 Features

400V Collector-Emitter Voltage (Vces)
200A Peak Collector Current (ICP)
SOP-8 Package for Surface Mounting
4.0V Gate Drive Voltage (Vge)
Built-in Zener Diode Protection

GT10G131 Applications

Ideal for industrial motor drive and control systems.
Used in solar inverters and grid-tied power converters.
Suitable for welding equipment and induction heating units.
Applied in uninterruptible power supply (UPS) circuits.
Designed for automotive charging and traction inverters.

GT10G131 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the GT10G131?

The maximum collector-emitter voltage (Vces) for the GT10G131 is 400V.

What is the peak collector current rating of the GT10G131?

The GT10G131 has a peak collector current (ICP) rating of 200A.

What package type is the Toshiba GT10G131 supplied in?

The GT10G131 is supplied in an SOP-8 package.

What is the typical gate drive voltage required for the GT10G131?

A gate drive voltage (Vge) of 4.0V is the minimum required for the GT10G131 when handling a collector current of 200A.

What is the typical collector-emitter saturation voltage for the GT10G131?

The typical collector-emitter saturation voltage (Vce(sat)) for the GT10G131 is 2.3V when the collector current is 200A and the gate-emitter voltage is 4V.