Mfr Part #:

GT025N06AT

Name: GT025N06AT
Brand: Goford Semiconductor
SKU: GT025N06AT

Description:

N60V, 170A,RD<2.5M@10V,VTH1.2V~2

Stock on Request

GT025N06AT Description

Short technical summary and product information.

N60V, 170A,RD<2.5M@10V,VTH1.2V~2

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	170A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4954 pF @ 30 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	215W (Tc)
Rds On (Max) @ Id, Vgs	2.5mOhm @ 20A, 10V
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA