| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The GS66516T-E02-MR from GaN Systems is a single FET Transistor designed for modern electronic applications. This component is RoHS3 Compliant, indicating adherence to environmental standards.
It also features an MSL 1 rating, signifying unlimited shelf life under standard conditions, and is REACH Unaffected. These attributes make it suitable for various power management and energy conversion systems where reliability and compliance are critical.
Semiconductors like the GS66516T-E02-MR are fundamental building blocks in digital electronics, enabling high power density and low power consumption. Gallium Nitride (GaN) technology, as used in this transistor, is key to achieving competitive performance in demanding applications such as EV powertrains and efficient power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The GS66516T-E02-MR is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is Unaffected.