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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The GP3NB60HD from STMicroelectronics is an N-Channel PowerMESH IGBT transistor. It is engineered for robust performance with a maximum collector-emitter voltage of 600V and a continuous collector current rating of 3A.
This IGBT is suitable for various power switching applications. Its PowerMESH technology offers improved performance characteristics.
The device is available in industry-standard packages including TO-220, TO-220FP, and D2PAK, facilitating integration into different circuit designs and mounting requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the GP3NB60HD is 600V.
The maximum continuous collector current for the GP3NB60HD is 3A.
The GP3NB60HD is an N-Channel PowerMESH IGBT transistor.
The GP3NB60HD is available in TO-220, TO-220FP, and D2PAK packages.