| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,554 pcs
|
1554 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The GP2T080A120U is a 1200V N-Channel Silicon Carbide (SiC) MOSFET from SemiQ, part of the QSiC family. It is designed for high-speed switching applications requiring high efficiency and reliability. The device is rated for a maximum drain-source voltage of 1200V and a continuous drain current of 35A at Tc=25°C, with a pulsed drain current capability of 80A.
The MOSFET features a typical drain-source on-resistance of 77mΩ (maximum 100mΩ) at VGS=20V and ID=20A, contributing to lower conduction losses. The gate threshold voltage is typically 1.8V with a maximum of 4V. The device has a maximum power dissipation of 188W at Tc=25°C and a maximum junction temperature of 175°C.
This SiC MOSFET is suitable for applications including solar inverters, switch mode power supplies, UPS systems, induction heating and welding, EV charging stations, high voltage DC/DC converters, and motor drives. The device is avalanche tested to 200mJ and features a reliable body diode with a typical reverse recovery time of 10ns.
The GP2T080A120U is available in a through-hole TO-247-3 package, suitable for standard PCB mounting. The device is designed for easy paralleling to achieve higher current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.72 | $7.72 |
| 10+ | $4.45 | $4.45 |
| 120+ | $3.72 | $3.72 |
| 510+ | $3.43 | $3.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 1200V.
The maximum continuous drain current is 35A at Tc=25°C.
The typical drain-source on-resistance is 77mΩ at VGS=20V, ID=20A, TJ=25°C, with a maximum of 100mΩ.
The operating junction temperature range is -55°C to 175°C.
The device is available in a through-hole TO-247-3 package.
The device is marked as RoHS3 compliant, though this status is unverified.
The maximum power dissipation is 188W at Tc=25°C.