| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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110 pcs
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110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The GP07N120 is a Fast Insulated Gate Bipolar Transistor (IGBT) from Infineon, built using NPT-technology. This technology provides very tight parameter distribution, high ruggedness, and stable temperature behavior, making it suitable for parallel switching applications.
Key electrical specifications include a collector-emitter voltage of 1200V and a continuous collector current of 7.9A at 100°C. The device offers a short circuit withstand time of 10 µs and is designed for applications such as motor controls, inverters, and switched-mode power supplies (SMPS).
Packaged in a PG-TO-220-3-1, this IGBT is qualified according to JEDEC standards for target applications. It features Pb-free lead plating and is RoHS compliant. The operating junction temperature ranges from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCE) for the GP07N120 is 1200V.
The continuous collector current (IC) at a case temperature of 100°C is 7.9A.
The GP07N120 comes in a PG-TO-220-3-1 package.
The maximum operating junction temperature (Tj) is 150°C.
The short circuit withstand time (tSC) is 10 µs.