| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | 1648+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The GN1L4M-T2-A is a PNP pre-biased bipolar transistor manufactured by Renesas. It integrates a 47kΩ base resistor, simplifying circuit design by reducing external component count. This transistor is designed for low-power switching and amplification applications.
Electrical specifications include a maximum collector-emitter voltage of 50V, a maximum collector current of 100mA, and a maximum power dissipation of 150mW. The DC current gain (hFE) is at least 95 at 50mA, 5V, and the collector-emitter saturation voltage is 200mV maximum at 250µA base current and 5mA collector current.
The device is offered in a surface mount SC-70 (SOT-323) package, suitable for compact PCB layouts. It is rated for general purpose use in consumer electronics, industrial controls, and portable devices. The pre-biased configuration provides consistent on/off characteristics and reduces board space.
| Qty | Low | High |
|---|---|---|
| 1,817+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
100mA.
150mW.
95 at Ic=50mA, Vce=5V.
47 kΩ.
SC-70 (SOT-323) surface mount package.
The data indicates RoHS3 compliant, but this information is unverified.