| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
73 pcs
|
73 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Type | |
| Mounting Type | |
| Operating Voltage | |
| Technology |
The GM76C256CLLFW70 from Hynix Semiconductor is a high-performance 32K x 8-bit Static Random Access Memory (SRAM) designed for various memory applications. This CMOS SRAM operates with a supply voltage of 5V and offers a maximum access time of 70ns, making it suitable for systems requiring fast data retrieval.
The component is available in a 28-pin DIP (Dual In-line Package) configuration, designed for through-hole mounting. Its organization of 32K words by 8 bits provides a total storage capacity of 256 Kbits. The GM76C256CLLFW70 is built using CMOS technology, ensuring low power consumption during operation.
This SRAM is a reliable choice for embedded systems, industrial controls, and other applications where dependable memory is crucial. Its specifications make it a versatile component for designers needing a standard SRAM solution.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The GM76C256CLLFW70 is a SRAM (Static Random Access Memory).
The organization is 32K x 8-Bit.
The maximum access time is 70 ns.
The operating voltage is 5 V.
The GM76C256CLLFW70 uses CMOS technology.
The GM76C256CLLFW70 is available in a DIP package.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.