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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SemiQ GHXS010A060S-D3 is a 600V, 10A silicon carbide (SiC) Schottky dual diode module designed for high-efficiency power conversion. It contains two independent SiC Schottky diodes in a compact SOT-227 (miniBLOC) chassis-mount package with screw terminals.
Key electrical specifications include a repetitive peak reverse voltage of 600V, a continuous forward current of 10A per leg at 25°C case temperature, and a typical forward voltage of 1.38V at 10A and 25°C. The SiC Schottky technology provides zero reverse recovery and zero forward recovery, enabling high-frequency operation with low switching losses. The module offers a high dv/dt ruggedness of 200 V/ns and a total capacitive charge of 36 nC.
The device is rated for an operating junction temperature range of -55°C to +175°C and features an internally isolated package using aluminum nitride (AlN) substrate for low thermal resistance. The junction-to-case thermal resistance is 1.54 °C/W typical per leg. The module is RoHS compliant and suitable for applications such as switched-mode power supplies, induction heaters, welding equipment, and charging stations.
| Qty | Low | High |
|---|---|---|
| 1+ | $27.72 | $27.72 |
| 10+ | $22.19 | $22.19 |
| 100+ | $19.19 | $19.19 |
| 500+ | $18.17 | $18.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (VRRM) is 600 V.
The continuous forward current per leg is 10 A at a case temperature of 25°C and junction temperature of 175°C.
The typical forward voltage is 1.38 V at 10 A and 25°C junction temperature.
No, as a SiC Schottky diode it has zero reverse recovery time (0 ns typical).
It is available in a SOT-227-4 (miniBLOC) chassis-mount package with screw terminals.
The operating junction temperature range is -55°C to +175°C.
Yes, the datasheet states it is RoHS compliant.