GD30PJX65L2S The Starpower GD30PJX65L2S is an IGBT module designed for general inverters and UPS applications. It features low conduction loss and short circuit ruggedness.
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GD30PJX65L2S

Available from 1 distributors
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The Starpower GD30PJX65L2S is an IGBT module designed for general inverters and UPS applications. It features low conduction loss and short circuit ruggedness.
✓ Total Stock: 24 pcs
$ Price Range: $0.99

GD30PJX65L2S Available from 1 distributor

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GD30PJX65L2S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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GD30PJX65L2S Description

Short technical summary and product information.

The Starpower GD30PJX65L2S is an IGBT Power Module offering ultra-low conduction loss and short circuit ruggedness. It is designed for applications such as general inverters and Uninterruptible Power Supplies (UPS).

 

Key electrical specifications include a 650V Collector-Emitter Voltage (VCES) and a 30A Continuous Collector Current (IC) at 100°C. The module also features a maximum power dissipation of 163W at a junction temperature of 175°C. It utilizes Trench IGBT technology for low VCE(sat) and has a positive temperature coefficient for VCE(sat).

 

Additional features include a 6μs short circuit capability, fast and soft reverse recovery anti-parallel FWD, and a low inductance case. The module is built with an isolated heatsink using DBC technology. Typical applications include inverters for motor drives, AC and DC servo drive amplifiers, and uninterruptible power supplies.

 

The operating junction temperature ranges from -40°C to +150°C, with a maximum junction temperature of 175°C for inverter and brake functions, and 150°C for rectifier functions. The isolation voltage RMS is rated at 2500V.

GD30PJX65L2S Quick Information

Product Type: IGBT Module
Canonical Name: GD30PJX65L2S IGBT Module

GD30PJX65L2S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

GD30PJX65L2S Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

GD30PJX65L2S Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • Maximum junction temperature 175°C.
  • Isolated heatsink using DBC technology.
  • Fast & soft reverse recovery anti-parallel FWD.

GD30PJX65L2S Applications

  • Inverter for motor drive applications
  • AC and DC servo drive amplifiers
  • Uninterruptible power supply systems
  • General inverter and UPS designs

GD30PJX65L2S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Collector-Emitter Voltage (VCES) for the GD30PJX65L2S?

The maximum Collector-Emitter Voltage (VCES) is 650V.

What is the continuous collector current at 100°C for the GD30PJX65L2S?

The continuous collector current at 100°C is 30A.

What is the maximum power dissipation of the GD30PJX65L2S?

The maximum power dissipation is 163W at Tj=175°C.

What is the maximum junction temperature for the GD30PJX65L2S?

The maximum junction temperature for inverter and brake is 175°C, and for rectifier is 150°C.

What is the typical collector to emitter saturation voltage at 30A and 15V gate-emitter voltage at 25°C?

The typical collector to emitter saturation voltage is 1.45V.

What is the typical gate-emitter threshold voltage?

The typical gate-emitter threshold voltage is 5.1V.

What is the isolation voltage of the GD30PJX65L2S module?

The isolation voltage RMS is 2500V.

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