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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
47 pcs
|
47 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| C (Typical @ VR=1200 V, f=1 MHz) | |
| Capacitance @ Vr, F | |
| Current | |
| IF (Nominal @ Tc=135 °C, D=1) | |
| IF (Nominal @ Tc=160 °C, D=1) | |
| IFSM (Maximum @ tp=10 ms, Tj=25 °C) | |
| IFSM (Maximum @ tp=10 µs, Tj=25 °C) | |
| IR (Minimum/Maximum @ VR=1700 V, Tj=25 °C) | |
| IR (Typical @ VR=1700 V, Tj=175 °C) | |
| Mounting Torque | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (@ TC = 25 °C) | |
| Qc (Typical @ VR=1200 V) | |
| Qc (Typical @ VR=600 V) | |
| Repetitive Peak Reverse Voltage | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| VF (Typical @ IF=10 A, Tj=175 °C) | |
| Voltage | |
| Weight | |
| tS (Maximum @ VR=1200 V) | |
| tS (Maximum @ VR=600 V) |
The GD10MPS17H is a 1700V silicon carbide Schottky diode from GeneSiC Semiconductor, designed for high-efficiency power conversion. It delivers a continuous forward current of 26A at a case temperature of 100°C (18A at 135°C, 10A at 160°C). The diode exhibits a typical forward voltage of 1.8V at 10A and 25°C, with a positive temperature coefficient that aids parallel operation. Thanks to its SiC Schottky structure, it achieves zero reverse recovery current, enabling extremely fast switching with a maximum switching time of less than 10ns. Surge current capability is 100A for a 10ms half-sine pulse and 500A for 10µs. The device can handle up to 218W of power dissipation (Tc=25°C) and operates over a junction temperature range of -55°C to 175°C. Total capacitance is 721pF at 1V and drops to 40pF at 1200V. The GD10MPS17H is packaged in a standard TO-247-2 through-hole package, suitable for mounting to a heatsink with a recommended torque of 1.1 Nm. Typical applications include EV fast chargers, solar inverters, motor drives, high-frequency rectifiers, switched-mode power supplies, and induction heating systems. The device is RoHS and REACH compliant (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $8.16 | $8.16 |
| 10+ | $7.29 | $7.29 |
| 30+ | $6.98 | $6.98 |
| 120+ | $6.52 | $6.52 |
| 270+ | $6.24 | $6.24 |
| 510+ | $6.20 | $6.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage (VRRM) is 1700 V.
At a case temperature of 100°C, the continuous forward current (IF) is 26 A. At 135°C it is 18 A, and at 160°C it is 10 A.
At 10 A and 25°C, the typical forward voltage (VF) is 1.8 V, with a minimum of 1.5 V. At 175°C, the typical VF is 2.1 V.
No, it has zero reverse recovery current due to its SiC Schottky structure, enabling fast switching with a maximum switching time of less than 10 ns.
The maximum switching time (tS) is less than 10 ns at both 600 V and 1200 V reverse voltage.
It is supplied in a TO-247-2 through-hole package, weighing 6.0 g and with a mounting torque of 1.1 Nm for heatsink screws.
The junction and storage temperature range is -55°C to 175°C.