Mfr Part #:

GC20N65Q

Name: GC20N65Q
Brand: Goford Semiconductor
SKU: GC20N65Q

Description:

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Stock on Request

GC20N65Q Description

Short technical summary and product information.

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	20A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1724 pF @ 100 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	151W (Tc)
Rds On (Max) @ Id, Vgs	170mOhm @ 10A, 10V
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 250µA