Mfr Part #:

GC11N65F

Name: GC11N65F
Brand: Goford Semiconductor
SKU: GC11N65F

Description:

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Stock on Request

GC11N65F Description

Short technical summary and product information.

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	11A
Drain to Source Voltage (Vdss)	650 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	901 pF @ 50 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	31.3W
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA