| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
433 pcs
|
433 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Type | |
| Forward Voltage | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The GBU6A is a single phase standard bridge rectifier manufactured by On Semiconductor. It is part of the GBU6 series of bridge rectifiers offering voltage ratings from 50V to 1000V.\n\nThis device has a maximum repetitive reverse voltage of 50V, a maximum RMS bridge input voltage of 35V, and a DC reverse voltage of 50V. The average rectified forward current is 6.0A at an ambient temperature of 100°C, with a non-repetitive peak forward surge current of 175A (8.3 ms single half-sine-wave). Typical forward voltage is 1.0V per element at 6.0A, and typical reverse current is 5.0 µA at 25°C and 500 µA at 125°C. The I²t rating is 127 A²s for t < 8.35 ms.\n\nThe bridge rectifier features a glass-passivated junction for reliable performance and is UL certified (UL #E258596). It has a power dissipation of 12W, with thermal resistance junction-to-ambient of 18.6 °C/W (mounted on PCB with 0.5×0.5 inch copper) and junction-to-lead of 3.1 °C/W (mounted on Al plate). The operating junction temperature range is -55°C to 150°C.\n\nThe GBU6A is available in a 4-SIP GBU through-hole package. The packing method is rail (tube). It is RoHS3 compliant (unverified), with MSL 1 (unlimited) and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.22 | $2.22 |
| 10+ | $1.07 | $1.07 |
| 100+ | $0.65 | $0.65 |
| 500+ | $0.64 | $0.64 |
| 800+ | $0.61 | $0.61 |
| 10,400+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
6.0 A at TA=100°C.
1.0 V per element at 6.0 A.
4-SIP GBU through-hole package.
175 A at 8.3 ms single half-sine-wave.
5.0 µA at 25°C and 500 µA at 125°C.
-55°C to 150°C.