| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The International Rectifier GA50TS120U is a HALF-BRIDGE Insulated Gate Bipolar Transistor (IGBT) featuring Generation 4 IGBT technology. It is designed for high operating frequencies, suitable for hard switching applications from 8-40 kHz and resonant mode applications above 200 kHz.
Key electrical characteristics include a collector-emitter voltage (VCES) of 1200V and a typical on-state voltage (VCE(on)) of 2.4V at 50A collector current. The device offers very low conduction and switching losses, along with HEXFRED™ antiparallel diodes with ultra-soft recovery.
This IGBT is housed in the industry-standard INT-A-PAK package. It is UL approved and utilizes Ultra-FastTM Speed IGBT technology. The component is optimized for applications requiring high efficiency and fast switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the GA50TS120U is 1200V.
The typical collector current (IC) for the GA50TS120U is 50A.
The typical collector-emitter on-voltage (VCE(on)) is 2.4V at VGE=15V and IC=50A.
The GA50TS120U is optimized for high operating frequencies, 8-40 kHz in hard switching and over 200 kHz in resonant mode.
The GA50TS120U is supplied in the INT-A-PAK package.