GA1L4M-T2-A

The GA1L4M-T2-A is a small signal NPN pre-biased bipolar junction transistor manufactured by Renesas. Pre-biased transistors integrate bias resistors (R1 = 47 kΩ) into the device, reducing external component count and simplifying circuit design. This device is designed for general-purpose switching and amplification applications where space is limited.

Key electrical specifications include a maximum collector-emitter breakdown voltage of 50 V, a maximum collector current of 100 mA, and a maximum power dissipation of 150 mW. The DC current gain (hFE) is a minimum of 95 at 50 mA collector current and 5 V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 200 mV at a base current of 250 µA and collector current of 5 mA.

The transistor is housed in an SC-70 (SOT-323) surface mount package, suitable for automated assembly and compact PCB layouts. The mounting type is surface mount, making it ideal for high-density designs.

Compliance data indicates RoHS3 compliance, MSL 1 (unlimited), and REACH unaffected, though these are unverified. The part is commonly used in consumer electronics, industrial controls, and signal processing circuits where a pre-biased NPN transistor is required.