LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS G30N60C3 is a 600V, 63A N-Channel Insulated Gate Bipolar Transistor (IGBT) from the UFS Series. Packaged in a standard TO-247 configuration, this device is suitable for high-power switching applications.
Key electrical characteristics include a continuous collector current of 63A at 25°C and 30A at 110°C, with a pulsed collector current capability of 252A. The device boasts a switching safe operating area (SOA) of 60A at 600V at a junction temperature of 150°C. It also features a typical fall time of 230ns at 150°C.
With a total power dissipation of 208W at 25°C, the G30N60C3 has a power derating of 1.67 W/°C for temperatures above 25°C. The operating and storage junction temperature range is from -40°C to 150°C. The device is sensitive to electrostatic discharge and requires proper handling procedures.
This IGBT is designed for applications requiring robust high-voltage switching performance. Its specifications make it suitable for various power electronics designs where reliability and performance are critical.
| Qty | Low | High |
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| 1+ | $165.89 | $165.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the G30N60C3 at 25°C is 63A.
The maximum collector-emitter voltage for the G30N60C3 is 600V.
The operating junction temperature range for the G30N60C3 is -40°C to 150°C.
The G30N60C3 is available in the TO-247 package.
The typical fall time for the G30N60C3 at 150°C is 230ns.
