Mfr Part #:

G2K3N10L6

Name: G2K3N10L6
Brand: Goford Semiconductor
SKU: G2K3N10L6

Description:

N100V, 3A,RD<220M@10V,VTH1.0V~2.

Stock on Request

G2K3N10L6 Description

Short technical summary and product information.

N100V, 3A,RD<220M@10V,VTH1.0V~2.

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer Name	Goford Semiconductor
Configuration	2 N-Channel (Dual)
Current	3A (Tc)
Drain to Source Voltage (Vdss)	100V
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	536pF @ 50V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power	1.67W (Tc)
Rds On (Max) @ Id, Vgs	220mOhm @ 2A, 10V
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2V @ 250µA