Mfr Part #:

G250N03IE

Name: G250N03IE
Brand: Goford Semiconductor
SKU: G250N03IE

Description:

N30V,ESD 5.3A,RD<25M@10V,VTH0.5V

Stock on Request

G250N03IE Description

Short technical summary and product information.

N30V,ESD 5.3A,RD<25M@10V,VTH0.5V

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	5.3A (Tc)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	573 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.4W (Tc)
Rds On (Max) @ Id, Vgs	25mOhm @ 4A, 10V
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1.3V @ 250µA