Mfr Part #:

G06N06S

Name: G06N06S
Brand: Goford Semiconductor
SKU: G06N06S

Description:

N60V,RD(MAX)<22M@10V,RD(MAX)<35M

Stock on Request

G06N06S Description

Short technical summary and product information.

N60V,RD(MAX)<22M@10V,RD(MAX)<35M

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	8A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.1W
Rds On (Max) @ Id, Vgs	22mOhm @ 6A, 10V
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 250µA