Mfr Part #:

G01N20LE

Name: G01N20LE
Brand: Goford Semiconductor
SKU: G01N20LE

Description:

N200V,RD(MAX)<850M@10V,RD(MAX)<9

Stock on Request

G01N20LE Description

Short technical summary and product information.

N200V,RD(MAX)<850M@10V,RD(MAX)<9

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	1.7A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.5W (Tc)
Rds On (Max) @ Id, Vgs	850mOhm @ 1.7A, 10V
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA