FZT957TA PNP silicon planar high current transistor. Rated for 300V collector-emitter voltage and 1A continuous collector current, in a surface mount SOT223-3 package.
Mfr Part #:

FZT957TA

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
PNP silicon planar high current transistor. Rated for 300V collector-emitter voltage and 1A continuous collector current, in a surface mount SOT223-3 package.
Total Stock: 10,085 pcs
$ Price Range: $0.66 - $2.26

FZT957TA Available from 5 distributors

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Non-Authorised

FZT957TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FZT957TA Description

Short technical summary and product information.

The FZT957TA is a PNP silicon planar high-performance bipolar transistor from Diodes Incorporated, designed for high current switching and driver applications. It features a 300V collector-emitter breakdown voltage (V(BR)CEO) and a continuous collector current rating of 1A, with a peak pulse current capability of 2A.

 

This transistor offers very low collector-emitter saturation voltage of 240mV max at 300mA base current and 1A collector current, ensuring efficient operation in saturated switching circuits. The DC current gain (hFE) is specified at a minimum of 100 at 500mA and 10V, with useful gain maintained up to 2A, making it suitable for both linear and switching applications.

 

The device is housed in a SOT223-3 surface mount package (equivalent to TO-261-4), which provides a compact footprint for space-constrained designs. Power dissipation is rated at 3W when mounted on a PCB with adequate copper area. The FZT957TA has a transition frequency of 85MHz, supporting moderate speed switching applications.

 

Typical applications include medium speed switching, driver stages, and power management circuits where PNP polarity is required. The complementary NPN type is FZT857, allowing use in push-pull and half-bridge topologies. Operating temperature range spans from -55°C to 150°C, suitable for industrial and automotive environments.

FZT957TA Quick Information

Product Type: Bipolar Transistor
Canonical Name: PNP Bipolar Junction Transistor, 300V Vceo, 1A Ic, SOT223-3
Subcategory: PNP Power Transistor

FZT957TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FZT957TA Estimated Pricing

Qty Low High
1+ $2.26 $2.26
10+ $1.42 $1.42
100+ $0.93 $0.93
500+ $0.74 $0.74
1,000+ $0.66 $0.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

FZT957TA Features

  • PNP silicon planar high current transistor.
  • 300V collector-emitter breakdown voltage.
  • 1A continuous, 2A peak current rating.
  • Very low saturation voltage (240mV max at 1A).
  • Housed in compact SOT223-3 surface mount package.

FZT957TA Applications

  • Medium speed switching and driver circuits.
  • Power management and load switching.
  • Complementary pair with FZT857 for push-pull stages.
  • Industrial and automotive electronics up to 150°C.

FZT957TA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of FZT957TA?

The collector-emitter voltage (Vceo) is 300V, with a breakdown voltage (V(BR)CEO) minimum of 300V.

What is the maximum continuous collector current?

The continuous collector current (Ic) is rated at 1A, with a peak pulse current capability of 2A.

What is the package type of FZT957TA?

The FZT957TA is in a SOT223-3 surface mount package, also designated as TO-261-4 or TO-261AA.

What is the operating temperature range?

The operating and storage temperature range for the junction is -55°C to 150°C.

Is the FZT957TA RoHS compliant?

The part is marked as RoHS3 compliant in the database, but this status is unverified from the manufacturer.

What is the DC current gain (hFE) at typical operating conditions?

The minimum hFE is 100 at 500mA collector current with 10V collector-emitter voltage.

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