FZT955TA PNP silicon planar high-current transistor with 140V collector-emitter breakdown, 4A continuous collector current, and 110MHz transition frequency.
Mfr Part #:

FZT955TA

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
PNP silicon planar high-current transistor with 140V collector-emitter breakdown, 4A continuous collector current, and 110MHz transition frequency.
Total Stock: 5,067 pcs
$ Price Range: $0.72 - $1.74

FZT955TA Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,202 pcs
2202 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
865 pcs
865 pcs On Request 1 On Request On Request On Request On Request On Request

FZT955TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Breakdown Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Peak Pulse Collector Current
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FZT955TA Description

Short technical summary and product information.

The FZT955TA is a PNP silicon planar high-current transistor designed for medium-power switching and amplification applications. It offers a collector-emitter breakdown voltage (VCEO) of 140V and a continuous collector current rating of 4A, with peak pulse capability up to 10A.

 

Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 1A collector current and 5V VCE, and a low VCE saturation voltage of 370mV maximum at 3A collector current and 300mA base current. The transistor has a transition frequency of 110MHz, suitable for medium-speed switching circuits.

 

The device is housed in a surface-mount SOT-223-3 package (TO-261-4 compatible) and can dissipate up to 3W when properly mounted. It operates over a junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and has an MSL rating of 1 (unlimited floor life).

FZT955TA Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: FZT955TA PNP Bipolar Junction Transistor, 140V VCEO, 4A Continuous Current, SOT-223-3
Subcategory: Single BJT

FZT955TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FZT955TA Estimated Pricing

Qty Low High
1+ $1.74 $1.74
10+ $0.91 $0.91
100+ $0.72 $0.72
1,000+ $0.72 $0.72

Estimated market price range - modelled values for guidance only, not live distributor offers.

FZT955TA Features

  • 140V collector-emitter breakdown voltage.
  • 4A continuous collector current rating.
  • Surface mount SOT-223-3 package.
  • 110MHz transition frequency.
  • Low VCE saturation voltage.

FZT955TA Applications

  • Medium power switching circuits.
  • Linear amplification stages.
  • Motor and solenoid drivers.
  • Power management in portable devices.

FZT955TA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (VCEO) of the FZT955TA?

The minimum collector-emitter breakdown voltage (VCEO) is 140V.

What is the continuous collector current rating?

The maximum continuous collector current is 4A.

What package is the FZT955TA available in?

It is supplied in a surface-mount SOT-223-3 package (also referred to as TO-261-4 / TO-261AA).

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the FZT955TA RoHS compliant?

The device is marked as RoHS3 Compliant.

What is the transition frequency?

The minimum transition frequency (fT) is 110MHz at a test condition of IC=-100mA, VCE=-10V, f=50MHz.

What is the DC current gain (hFE) at 1A?

The minimum DC current gain is 100 at IC=1A, VCE=5V.

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