Mfr Part #:

FZT855TA

Q: What is the power dissipation of the FZT855TA?

Maximum power dissipation is 3W when mounted on FR4 board (Note 5) and 1.6W in free air (Note 6).

The FZT855TA is a 150V, 5A NPN medium power transistor from Diodes Incorporated. It features low saturation voltage and high current gain, packaged in a SOT223-3 surface mount package.

✓ Total Stock: 2,813 pcs

$ Price Range: $0.85 - $1.76

FZT855TA Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,020 pcs On Request	2020 pcs	On Request	1	On Request	On Request	1618+	On Request	2026-06-03 08:15:10
Braun Electronic Components ✓ Non-Authorised Inventory information	793 pcs On Request	793 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FZT855TA Description

Short technical summary and product information.

The FZT855TA is a 150V NPN medium power transistor designed for high voltage switching and linear applications. It features a continuous collector current rating of 5A and a peak current capability of 10A. The device offers very low collector-emitter saturation voltage, typically less than 110mV at 1A collector current, which minimizes power loss in switching circuits. DC current gain (hFE) is a minimum of 100 at 1A, ensuring good drive efficiency. The transition frequency is 90MHz, making it suitable for medium frequency applications. Power dissipation is rated at 3W when mounted on an FR4 printed circuit board (Note 5) and 1.6W in free air (Note 6). The transistor is housed in a surface mount SOT223-3 package (also known as TO-261-4, TO-261AA), which is compact and suitable for automated assembly. The package is molded with a green molding compound and has matte tin plated leads that are solderable per MIL-STD-202, Method 208. Moisture sensitivity level is 1 (unlimited) per J-STD-020. The device is RoHS3 compliant and halogen- and antimony-free, meeting environmental standards. The complementary PNP type is FZT955.

FZT855TA Quick Information

Product Type: Bipolar Junction Transistor (BJT)

Canonical Name: FZT855TA 150V NPN Medium Power Transistor

Subcategory: Single NPN Transistor

FZT855TA Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

FZT855TA Estimated Pricing

Qty	Low	High
1+	$1.76	$1.76
10+	$1.17	$1.17
100+	$0.85	$0.85
1,000+	$0.85	$0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

FZT855TA Features

High voltage NPN transistor with 150V VCEO.
Continuous collector current rating of 5A.
Very low saturation voltage below 110mV at 1A.
High DC current gain of 100 at 1A.
Surface mount SOT223-3 package.

FZT855TA Applications

Medium power switching circuits.
Linear amplifier stages.
Motor and solenoid drivers.
Power management in portable devices.
General purpose high voltage switching.

FZT855TA FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage of the FZT855TA?

The minimum collector-emitter breakdown voltage (BVCEO) is 150V.

What package does the FZT855TA come in?

The FZT855TA is available in a SOT223-3 surface mount package (TO-261-4, TO-261AA).

What is the operating temperature range of the FZT855TA?

The operating junction temperature range is -55°C to 150°C.

Is the FZT855TA RoHS compliant?

Yes, the FZT855TA is RoHS3 compliant (EU Directive 2011/65/EU and 2015/863/EU).

What is the maximum continuous collector current of the FZT855TA?

The maximum continuous collector current is 5A, with a peak current of 10A.

What is the collector-emitter saturation voltage of the FZT855TA?

The maximum VCE(sat) is 355mV at Ib=500mA, Ic=5A; typical VCE(sat) is <110mV at Ic=1A.

What is the power dissipation of the FZT855TA?