FZT853TA

The FZT853TA is an NPN bipolar junction transistor designed for medium-power switching and amplification applications. Manufactured by Diodes Incorporated, it features a collector-emitter breakdown voltage of 100V and a high continuous collector current rating of 6A, with a peak pulse current capability of 10A. The device is offered in a compact SOT-223 surface-mount package, suitable for space-constrained PCB designs.

Key electrical characteristics include a typical transition frequency of 130MHz, a DC current gain (hFE) of at least 100 at 2A/2V, and a low collector-emitter saturation voltage of 150mV at 2A. The equivalent on-resistance is 50mΩ, enabling efficient high-current switching. The device is qualified to AEC-Q101 standards, making it suitable for automotive applications, and is RoHS-compliant with a green molding compound and matte tin-plated leads.

With a power dissipation of 3W (derated above 25°C) and an operating junction temperature range of -55°C to 150°C, the FZT853TA offers reliable performance in demanding environments. Its thermal resistance is 42°C/W junction-to-ambient and 8.8°C/W junction-to-lead. The complementary PNP type is the FZT953, allowing for matched push-pull configurations. Packaging options include tape-and-reel with 1,000 units per reel.