FZT851QTA NPN bipolar transistor rated for 60V collector-emitter breakdown and 6A continuous collector current. Features low saturation voltage of 375mV at 6A and high DC current gain of 100 at 2A.
Mfr Part #:

FZT851QTA

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
NPN bipolar transistor rated for 60V collector-emitter breakdown and 6A continuous collector current. Features low saturation voltage of 375mV at 6A and high DC current gain of 100 at 2A.
Total Stock: 43,020 pcs
$ Price Range: $0.88 - $2.05

FZT851QTA Available from 1 distributor

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Non-Authorised
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43,020 pcs
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FZT851QTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (Max)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Emitter-Base Voltage (Max)
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Peak Pulse Collector Current
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Thermal Resistance, Junction to Lead
Transistor Type
Vce Sat (Typical @ Ib=1 A)
Vce Saturation (Max) @ Ib, Ic
Voltage

FZT851QTA Description

Short technical summary and product information.

The FZT851QTA is an NPN medium power bipolar junction transistor from Diodes Incorporated. It is designed for general purpose switching and amplification applications requiring up to 6A continuous collector current and 60V collector-emitter voltage.

 

Key electrical characteristics include a DC current gain (hFE) of 100 minimum at 2A collector current and 1V VCE, low collector-emitter saturation voltage of 375mV maximum at 6A, and a transition frequency of 130MHz. The device also features high peak pulse current capability of 20A and ESD protection up to 8kV HBM.

 

The transistor is housed in a surface mount SOT223-3 package (TO-261-4, TO-261AA) with matte tin plated leads. It is RoHS compliant, halogen and antimony free, and has a moisture sensitivity level of 1. The operating temperature range is -55°C to 150°C. The FZT851QTA variant is AEC-Q101 qualified for automotive applications.

FZT851QTA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: FZT851
Canonical Name: FZT851QTA - NPN Bipolar Transistor, 60V VCEO, 6A IC, SOT223-3
Subcategory: Single NPN

FZT851QTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FZT851QTA Estimated Pricing

Qty Low High
1+ $2.05 $2.05
10+ $1.31 $1.31
100+ $0.88 $0.88
1,000+ $0.88 $0.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

FZT851QTA Features

  • NPN transistor with 60V collector-emitter breakdown.
  • Continuous collector current rating of 6A.
  • Low saturation voltage of 375mV at 6A.
  • High DC current gain of 100 at 2A.
  • AEC-Q101 qualified for automotive applications.

FZT851QTA Applications

  • Used in power management and switching circuits.
  • Suitable for motor driver and solenoid control.
  • Ideal for DC-DC converter and regulator designs.
  • Applicable in automotive electronic control units.

FZT851QTA FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

60 V

What is the package type?

SOT223-3 (TO-261-4, TO-261AA)

What is the operating temperature range?

-55°C to 150°C

Is the FZT851QTA RoHS compliant?

Yes, it is RoHS compliant.

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