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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70,020 pcs
|
70020 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | 2026-06-03 08:15:10 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
928 pcs
|
928 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Carrier | |
| Collector Current (Maximum @ Pulse) | |
| Collector Current (Maximum) | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (VCEO) | |
| Collector-Emitter Saturation Voltage (Maximum @ Ib = -50 mA, Ic = -50 mA) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| ESD Human Body Model | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ Note 5) | |
| Power Dissipation (Maximum @ Note 6) | |
| Power Dissipation (Maximum @ Note 7) | |
| Power Dissipation (Maximum @ Note 8) | |
| Reel Size | |
| SVHC Present | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Terminal Finish | |
| Thermal Resistance Junction To Ambient (Maximum @ Note 7) | |
| Thermal Resistance Junction To Ambient (Maximum @ Note 8) | |
| Thermal Resistance, Junction to Ambient (Maximum @ Note 5) | |
| Thermal Resistance, Junction to Ambient (Maximum @ Note 6) | |
| Thermal Resistance, Junction to Lead | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The FZT758TA is a 400V PNP high voltage bipolar junction transistor from Diodes Incorporated, designed for surface mount applications in the compact SOT223-3 package. It features a minimum collector-emitter breakdown voltage of -400V and a maximum continuous collector current of -0.5A, with a peak pulse current capability of -1A. The device offers low saturation voltage, typically -250mV at -50mA collector current, and a DC current gain (hFE) of at least 40 at 200mA and 10V.
Thermally, the FZT758TA is specified with a maximum power dissipation of 3.0W under certain test conditions (Note 5) and includes multiple thermal resistance ratings depending on the mounting configuration. It operates over a junction temperature range of -55°C to 150°C, making it suitable for industrial and automotive environments (though automotive qualification requires separate verification).
The transistor is packaged in a surface mount SOT223-3 (TO-261AA) with matte tin plated leads, and is supplied in tape and reel packaging with 1000 units per reel. It is fully RoHS3 compliant, lead-free, and halogen and antimony free, meeting green device requirements. The complementary NPN type is the FZT658, also from Diodes Incorporated.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
| 10+ | $0.87 | $0.87 |
| 100+ | $0.69 | $0.69 |
| 1,000+ | $0.69 | $0.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (BVCEO) is -400V.
The FZT758TA is supplied in a surface mount SOT223-3 package (TO-261AA).
The operating junction temperature range is -55°C to 150°C.
Yes, the FZT758TA is RoHS3 compliant and lead-free, with a matte tin plated finish.
The maximum continuous collector current (IC) is -0.5A, with a peak pulse current (ICM) of -1A.
The complementary NPN type is the FZT658 from Diodes Incorporated.
The minimum DC current gain is 40 at Ic = 200 mA and Vce = 10 V.