FZT757TA

The FZT757TA is a 300V PNP high voltage bipolar junction transistor manufactured by Diodes Incorporated. It is designed for general-purpose switching and amplification applications requiring high voltage capability. Key electrical characteristics include a minimum collector-emitter breakdown voltage (BVCEO) of -300V, continuous collector current of -0.5A, and peak pulse current of -1A. The DC current gain (hFE) is at least 50 at 100mA collector current and 5V collector-emitter voltage. Maximum collector-emitter saturation voltage is 500mV at 100mA collector current and 10mA base current. The transition frequency is 30 MHz.

The transistor is offered in a SOT223-3 surface mount package (TO-261-4 equivalent). Power dissipation is dependent on the mounting condition: 3W when mounted on a 50mm x 50mm 2oz copper pad, 2W on 1oz copper same size, 1.6W on 25mm x 25mm 1oz copper, and 1.2W on minimum pad. Corresponding thermal resistance junction-to-ambient ranges from 41.7°C/W to 104°C/W. The operating junction temperature range is -55°C to 150°C.

The device is RoHS3 compliant, halogen and antimony free, with a matte tin plated lead finish. Moisture sensitivity level is 1 per J-STD-020. ESD ratings are 4kV HBM (Class 3A) and 400V MM (Class C). The complementary NPN type is the FZT657.