| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
461 pcs
|
461 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape Width |
The Diodes Incorporated FZT751Q is a PNP bipolar junction transistor (BJT) specifically designed to meet the stringent requirements of automotive applications. This device boasts a collector-emitter voltage (VCEO) of greater than -60V and can handle a high continuous collector current (IC) of -3A, with a peak pulse current (ICM) of -6A.
Key electrical characteristics include a low saturation voltage (VCE(sat)) of less than -300mV at -1A, making it efficient for power switching applications. The transistor is housed in a SOT223 package, suitable for surface mounting.
This component is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, ensuring suitability for automotive change control requirements. It is also lead-free, RoHS compliant, and a "Green" device, being halogen and antimony free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the FZT751Q is greater than -60V.
The FZT751Q has a high continuous collector current (IC) rating of -3A.
The peak pulse current (ICM) for the FZT751Q is -6A.
The low saturation voltage (VCE(sat)) for the FZT751Q is less than -300mV when the collector current is -1A.
The FZT751Q is available in the SOT223 package.
The operating and storage temperature range for the FZT751Q is -55°C to +150°C.