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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,348 pcs
|
1348 pcs | On Request | 1 | On Request | On Request | 0417+ | On Request | On Request | |
|
481 pcs
|
481 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | 2026-04-21 15:15:08 |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Carrier | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| ESD Rating (Human Body Model) | |
| ESD Rating - Machine Model | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Packing Quantity | |
| Peak Pulse Collector Current | |
| Power | |
| Reel Size | |
| Rth Ja (Maximum @ Device mounted on 25 mm² copper pad) | |
| Rth Ja (Maximum @ Device mounted on minimum pad) | |
| Rth Ja (Maximum @ Device mounted on standard FR 4 PCB) | |
| Rth Ja (Maximum @ Device mounted with collector lead on 50 mm² copper pad) | |
| SVHC Present | |
| Solderability | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Terminal Finish | |
| Thermal Resistance, Junction to Lead | |
| Transistor Type | |
| Vce Sat (Maximum @ Ic = 1 A) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight | |
| pd (Maximum @ Device mounted on 25 mm² copper pad) | |
| pd (Maximum @ Device mounted on minimum pad) | |
| pd (Maximum @ Device mounted with collector lead on 50 mm² copper pad) |
The FZT749TA is a PNP medium power transistor from Diodes Incorporated, designed for applications requiring high current and voltage handling. It features a collector-emitter breakdown voltage (VCEO) of -25 V minimum and a continuous collector current rating of -3 A. The device offers low saturation voltage, typically below -300 mV at -1 A collector current, enabling efficient switching performance.
Key electrical characteristics include a transition frequency of 160 MHz, making it suitable for high-speed switching applications. The transistor is rated for a peak pulse current of -8 A and has a maximum power dissipation of 3 W when mounted on a 50 mm² copper pad. Thermal resistance varies from 41.7 °C/W to 104 °C/W depending on PCB copper area.
The FZT749TA is housed in a surface-mount SOT223 package (SOT-223-3), which is RoHS3 compliant, halogen-free, and has an MSL of Level 1 (unlimited). It is ESD rated to 4000 V HBM (Class 3A) and 400 V MM. The device is complementary to the DIODES FZT649 NPN transistor. Applications include MOSFET and IGBT gate driving.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.38 | $1.38 |
| 10+ | $0.76 | $0.76 |
| 100+ | $0.57 | $0.57 |
| 500+ | $0.46 | $0.46 |
| 1,000+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Collector-emitter voltage (VCEO) is -25 V minimum.
SOT223 (SOT-223-3) surface mount.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant (EU Directive 2011/65/EU and 2015/863/EU).
Maximum -3 A.
Low saturation voltage typically below -300 mV at -1 A collector current.
160 MHz.