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FZT696BTA The FZT696BTA is an NPN high voltage transistor with 180V VCEO and 0.5A continuous collector current, housed in a surface-mount SOT223-3 package.
Mfr Part #:

FZT696BTA

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The FZT696BTA is an NPN high voltage transistor with 180V VCEO and 0.5A continuous collector current, housed in a surface-mount SOT223-3 package.
✓ Total Stock: 1,482 pcs
$ Price Range: $0.45 - $1.67

FZT696BTA Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,482 pcs
On Request
1482 pcs On Request 1 On Request On Request 20+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FZT696BTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Conflict Minerals
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Transistor Type
UL Flammability Rating
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight
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FZT696BTA Description

Short technical summary and product information.

The FZT696BTA is an NPN bipolar junction transistor designed for high voltage switching and amplification applications. It features a collector-emitter breakdown voltage (BVCEO) greater than 180V and a continuous collector current rating of 0.5A, making it suitable for a variety of power management tasks.

 

This transistor offers a high DC current gain (hFE) with a minimum of 150 at 200mA, 5V and a typical gain above 500 at lower currents, ensuring efficient signal amplification. Its very low collector-emitter saturation voltage (250mV maximum at 200mA collector current) minimizes power dissipation. The device can handle peak pulse currents up to 1A.

 

Packaged in a surface-mount SOT223-3 form factor, the FZT696BTA supports automated assembly. It is compliant with RoHS3 and is halogen- and antimony-free (Green device). Typical applications include Darlington replacements, relay and solenoid driver circuits, and high-voltage switching.

FZT696BTA Quick Information

Product Type: NPN Bipolar Transistor
Series: FZT696B
Canonical Name: FZT696BTA 180V NPN Bipolar Transistor, 0.5A, SOT223-3
Subcategory: Single Bipolar Transistors

FZT696BTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FZT696BTA Estimated Pricing

Qty Low High
1+ $1.67 $1.67
10+ $1.04 $1.04
100+ $0.63 $0.63
500+ $0.54 $0.54
1,000+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

FZT696BTA Features

  • 180V collector-emitter breakdown voltage.
  • 0.5A continuous collector current rating.
  • Low saturation voltage: 250mV at 200mA.
  • High DC current gain: 150 minimum at 200mA.
  • Surface-mount SOT223-3 package.

FZT696BTA Applications

  • Used as a Darlington transistor replacement.
  • Ideal for relay and solenoid driver circuits.
  • Suitable for high-voltage switching applications.

FZT696BTA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO)?

The maximum collector-emitter voltage is 180V.

What is the package type of the FZT696BTA?

It is housed in a surface-mount SOT223-3 package (equivalent to TO-261-4, TO-261AA).

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the FZT696BTA RoHS compliant?

Yes, the device is RoHS3 compliant.

What is the DC current gain (hFE) at typical conditions?

Minimum hFE is 150 at Ic=200mA, Vce=5V; typical gain is above 500 at 0.1A.

What is the collector-emitter saturation voltage?

The maximum saturation voltage is 250mV at Ib=5mA, Ic=200mA.

What is the complementary PNP transistor for this device?

The complementary PNP type is the FZT795A by Diodes Incorporated.

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