FZT694BTA NPN medium power high gain transistor rated for 120V and 1A continuous current in a SOT223-3 surface mount package.
Mfr Part #:

FZT694BTA

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
NPN medium power high gain transistor rated for 120V and 1A continuous current in a SOT223-3 surface mount package.
Total Stock: 19,680 pcs
$ Price Range: $0.47 - $1.56

FZT694BTA Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,020 pcs
18020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,660 pcs
1660 pcs On Request 1 On Request On Request 20+ On Request On Request

FZT694BTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum @ Ic = 200 mA, Vce = 2 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Peak Collector Current
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

FZT694BTA Description

Short technical summary and product information.

The FZT694BTA is an NPN bipolar junction transistor from Diodes Incorporated designed for medium power switching and amplification applications. It features a collector-emitter breakdown voltage (BVCEO) of 120V and a continuous collector current rating of 1A with a peak capability of 2A.

 

This transistor offers high DC current gain with a minimum hFE of 400 at 200 mA, making it suitable for Darlington replacement and high-gain driver stages. The very low saturation voltage (500 mV max at 400 mA) provides efficient switching performance.

 

The device is housed in a surface mount SOT223-3 package (TO-261-4, TO-261AA) with matte tin plated leads. It is rated for operation over a junction temperature range of -55°C to +150°C with a power dissipation of 2W. The complementary PNP type is the FZT795A.

FZT694BTA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: FZT694BTA NPN Medium Power High Gain Transistor
Subcategory: Single

FZT694BTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FZT694BTA Estimated Pricing

Qty Low High
1+ $1.56 $1.56
10+ $0.99 $0.99
100+ $0.66 $0.66
500+ $0.51 $0.51
1,000+ $0.47 $0.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

FZT694BTA Features

  • 120V collector-emitter breakdown voltage.
  • 1A continuous collector current rating.
  • High DC current gain (hFE > 400).
  • Very low saturation voltage of 500 mV.
  • 130 MHz transition frequency.

FZT694BTA Applications

  • Darlington replacement in switching circuits.
  • Relay and solenoid driver applications.
  • Medium power amplification stages.

FZT694BTA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the FZT694BTA?

120V

What is the continuous collector current rating?

1A

What package does the FZT694BTA come in?

Surface mount SOT223-3 (TO-261-4, TO-261AA)

What is the operating temperature range?

-55°C to +150°C (junction temperature)

Is the FZT694BTA RoHS compliant?

Yes, RoHS3 compliant. Datasheet states RoHS and lead-free finish.

What is the DC current gain (hFE) at 200 mA?

Minimum of 400 at Ic = 200 mA, Vce = 2V

What is the complementary PNP type?

FZT795A

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