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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
956 pcs
|
956 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Base-Emitter Turn-On Voltage (VBE(on)) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC=0.1 A, IB=0.5 mA) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC=0.1 A, IB=1 mA) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC=1 A, IB=50 mA) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC=3 A, IB=20 mA) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC=0.1 A, VCE=2 V) | |
| DC Current Gain (hFE) (Minimum @ IC=10 A, VCE=2 V) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Input Capacitance (Cibo) | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Peak Pulse Collector Current (ICM) | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-Off Time (toff) | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The FZT688BTA is an NPN silicon planar medium power high gain transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of 12V and a continuous collector current rating of 4A, with a peak pulse current capability of 10A. The device offers a DC current gain (hFE) of 400 minimum at 3A, making it suitable for applications requiring high gain at moderate currents.
Electrical characteristics include a collector-emitter saturation voltage as low as 40mV at 0.1A and 400mV at 4A. The transistor has a typical transition frequency of 150MHz, supporting efficient operation in switching and amplifier circuits. It is housed in a surface mount SOT223-3 package and is designed for operation over a junction temperature range of -55°C to 150°C.
The part is particularly suited for flash gun converters and battery-powered circuits where low saturation voltage and high gain are critical. Its complementary type is the FZT788B. The datasheet includes SPICE parameters available upon request for design simulation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.78 | $1.78 |
| 10+ | $0.99 | $0.99 |
| 100+ | $0.72 | $0.72 |
| 500+ | $0.59 | $0.59 |
| 1,000+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (I C) is 4A, and the peak pulse collector current (I CM) is 10A.
It is offered in a surface mount SOT223-3 package (TO-261-4, TO-261AA case).
The junction and storage temperature range is -55°C to 150°C.
The minimum hFE is 500 at I C=0.1A, 400 at I C=3A, and 100 at I C=10A, all measured at V CE=2V.
The typical transition frequency (f T) is 150 MHz at I C=50mA, V CE=5V, f=50MHz.
The maximum V CE(sat) ranges from 40mV at I C=0.1A, I B=1mA to 400mV at I C=4A, I B=50mA.
The complementary PNP type is the FZT788B, also manufactured by Diodes Incorporated.