FZT658TA The FZT658TA is a 400V NPN high voltage bipolar junction transistor rated for 500mA continuous collector current, featuring low saturation voltage and high gain in a surface mount SOT223-3 package.
Mfr Part #:

FZT658TA

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The FZT658TA is a 400V NPN high voltage bipolar junction transistor rated for 500mA continuous collector current, featuring low saturation voltage and high gain in a surface mount SOT223-3 package.
Total Stock: 15,020 pcs
$ Price Range: $0.45 - $1.39

FZT658TA Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
15,020 pcs
15020 pcs On Request 1 On Request On Request On Request On Request On Request

FZT658TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Breakdown Voltage (VCBO)
Collector-Emitter Breakdown Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Peak Pulse Current (ICM)
Power
Reel Size
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Termination Finish
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

FZT658TA Description

Short technical summary and product information.

The FZT658TA is an NPN high voltage bipolar junction transistor manufactured by Diodes Incorporated. It is designed for applications requiring a collector-emitter breakdown voltage (VCEO) of 400V minimum and a continuous collector current capability of 500mA, with a peak pulse current rating of 1A.

 

Key electrical characteristics include a DC current gain (hFE) of at least 40 at 200mA collector current with 10V collector-emitter voltage, and a low collector-emitter saturation voltage of 500mV maximum at 100mA collector current with 10mA base current. The transition frequency is typically 50MHz.

 

The transistor is supplied in a surface mount SOT223 package, which features a matte tin plated terminal finish and is rated for an operating temperature range of -55°C to +150°C. The device is RoHS3 compliant and halogen- and antimony-free, with moisture sensitivity level 1 per J-STD-020. Standard packaging is 1,000 units per 7-inch reel on 12mm tape.

FZT658TA Quick Information

Product Type: Bipolar Transistor
Canonical Name: FZT658TA NPN High Voltage Transistor
Subcategory: Bipolar Junction Transistor

FZT658TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Yes

FZT658TA Estimated Pricing

Qty Low High
1+ $1.39 $1.39
10+ $0.87 $0.87
100+ $0.58 $0.58
500+ $0.45 $0.45
1,000+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

FZT658TA Features

  • NPN high voltage bipolar transistor.
  • 400V minimum collector-emitter breakdown.
  • 500mA continuous collector current.
  • Low saturation voltage under 500mV.
  • Surface mount SOT223-3 package.

FZT658TA Applications

  • High voltage switching circuits.
  • Linear amplification and driver stages.
  • Telecom and power supply designs.

FZT658TA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the FZT658TA?

The minimum collector-emitter breakdown voltage (VCEO) is 400V.

What is the maximum continuous collector current rating?

The continuous collector current (IC) rating is 500 mA.

What package is the FZT658TA available in?

The transistor is supplied in a surface mount SOT223-3 package (TO-261-4, TO-261AA).

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

Is the FZT658TA RoHS compliant?

Yes, the device is RoHS3 compliant, lead-free, and halogen- and antimony-free.

What is the gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 40 at a collector current of 200 mA and a collector-emitter voltage of 10 V.

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