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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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31,400 pcs
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31400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FZT3019 is an NPN bipolar junction transistor manufactured by ON Semiconductor. It has a minimum collector-emitter breakdown voltage of 80 V, a collector current rating of 1 A, and a maximum power dissipation of 1 W. It is suitable for discrete switching and amplification circuits.
Key electrical characteristics include a minimum DC current gain of 100 at Ic=150mA and Vce=10V, a maximum collector-emitter saturation voltage of 500mV at Ib=50mA and Ic=500mA, and a transition frequency of 100MHz. The junction temperature range is -55°C to 150°C.
The FZT3019 is offered in a TO-261-4 / TO-261AA package with supplier device package SOT-223-4. It uses surface-mount technology, allowing integration into compact printed circuit board layouts.
The minimum collector-emitter breakdown voltage is 80 V.
The collector current rating is 1 A.
The junction temperature range is -55°C to 150°C.
The FZT3019 is available in a TO-261-4 / TO-261AA package with supplier device package SOT-223-4.
The minimum DC current gain (hFE) is 100 at Ic=150mA and Vce=10V.
The maximum VCE(sat) is 500mV at Ib=50mA and Ic=500mA.
The compliance data indicates RoHS3 compliant, but this is unverified.