FZT1151ATA The FZT1151ATA is a PNP medium power transistor from Diodes Incorporated rated for -40V collector-emitter voltage and -3A continuous collector current. It comes in a surface-mount SOT-223 package with a typical transition frequency of 145MHz.
Mfr Part #:

FZT1151ATA

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The FZT1151ATA is a PNP medium power transistor from Diodes Incorporated rated for -40V collector-emitter voltage and -3A continuous collector current. It comes in a surface-mount SOT-223 package with a typical transition frequency of 145MHz.
Total Stock: 8,135 pcs
$ Price Range: $0.71 - $1.80

FZT1151ATA Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
95 pcs
95 pcs On Request 1 On Request On Request 2022+ On Request On Request

FZT1151ATA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Automotive Grade
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating
Emitter-Base Voltage (VEBO)
Flammability Rating
Frequency
Halogen Free
Mounting Type
Operating Temperature
Peak Pulse Current (ICM)
Power
Power Dissipation (PD)
SVHC Present
Standard Package Quantity
Supplier Device Package
Tape & Reel
Tape and Reel Information
Terminal Finish
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance Junction to Lead (RθJL)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

FZT1151ATA Description

Short technical summary and product information.

The FZT1151ATA is a PNP medium power bipolar junction transistor manufactured by Diodes Incorporated. It is designed for applications requiring high continuous collector current of -3A with a peak pulse current capability of -5A. The device features a collector-emitter breakdown voltage (BVCEO) greater than -40V and a collector-base voltage rating of -45V.

 

Electrical characteristics include a DC current gain (hFE) of at least 250 at Ic=500mA and Vce=2V, with gain specified up to -5A for high-gain hold-up applications. The saturation voltage is low, with VCE(sat) typically below -140mV at -1A and a maximum of 300mV at Ib=250mA and Ic=3A. The transition frequency is typically 145MHz, making it suitable for medium-speed switching and amplification circuits.

 

The device is housed in a SOT-223 surface-mount package with matte tin plated terminals. It has a moisture sensitivity level of 1 per J-STD-020, allowing unlimited floor life. The molding compound is rated UL 94V-0 for flammability. The device is qualified to AEC-Q101 for automotive applications and is RoHS compliant with a lead-free finish.

 

With a power dissipation of up to 3W at 25°C ambient (depending on mounting conditions) and an operating junction temperature range of -55°C to 150°C, this transistor is suitable for power management, load switching, and driver circuits in industrial and automotive environments.

FZT1151ATA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: FZT1151ATA PNP Medium Power Transistor
Subcategory: Single BJT

FZT1151ATA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FZT1151ATA Estimated Pricing

Qty Low High
1+ $1.80 $1.80
10+ $0.85 $0.85
100+ $0.76 $0.76
500+ $0.71 $0.71
1,000+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

FZT1151ATA Features

  • PNP transistor rated for -40V VCEO.
  • Handles -3A continuous collector current.
  • Low saturation voltage of 300mV max.
  • Surface mount SOT-223 package.
  • AEC-Q101 qualified for automotive use.

FZT1151ATA Applications

  • Used in power management switching circuits.
  • Suitable for load driver applications.
  • Ideal for medium-speed amplification stages.
  • Works in automotive electronic control modules.

FZT1151ATA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the FZT1151ATA?

The maximum collector-emitter voltage (VCEO) is -40V, with a breakdown voltage BVCEO greater than -40V.

What is the continuous collector current rating?

The continuous collector current (IC) is rated at -3A maximum, with a peak pulse current (ICM) of -5A.

What package is the FZT1151ATA available in?

The FZT1151ATA comes in a surface-mount SOT-223 package (SOT-223-3, 3-lead).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FZT1151ATA RoHS compliant?

Yes, the FZT1151ATA is RoHS3 compliant with a lead-free matte tin plated finish.

What is the DC current gain of this transistor?

The minimum DC current gain (hFE) is 250 at Ic=500mA and Vce=2V, with gain specified up to -5A.

What is the transition frequency of the FZT1151ATA?

The typical transition frequency (fT) is 145MHz.

Home
Account

Categories