FZT1053ATA

The FZT1053ATA is an NPN bipolar junction transistor manufactured by Diodes Incorporated in a SOT223-3 surface mount package. It is rated for a minimum collector-emitter breakdown voltage of 75 V, minimum collector-base breakdown voltage of 150 V, and minimum emitter-base breakdown voltage of 7 V. The device supports a continuous collector current of 4.5 A and a peak pulse collector current of 10 A, with a maximum base current of 500 mA.

This transistor provides high DC current gain, with minimum hFE of 300 at both 500 mA and 1 A. It also features low saturation voltage: less than 120 mV at 1 A collector current and a maximum of 440 mV at 4.5 A when base current is 200 mA. Typical equivalent on-resistance is 78 mΩ at 4.5 A. With its medium power rating, the device is well suited for switching and amplification functions.

The SOT223-3 package has a molded plastic case rated UL 94V-0, matte tin plated terminals, and a weight of approximately 0.112 grams. Moisture sensitivity is Level 1 per J-STD-020. Maximum power dissipation is 3.0 W when mounted on a 52 mm × 52 mm, 2 oz copper, single-sided 1.6 mm FR4 PCB, with a typical junction-to-ambient thermal resistance of 41.7 °C/W. The operating junction temperature range is -55 °C to +150 °C.

The device is RoHS3 compliant, lead-free, halogen-free and antimony-free, and qualified to AEC-Q101 automotive standards. ESD ratings are 4000 V human body model and 400 V machine model.