| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance |
The Infineon FZ600R12KS4 is an IGBT module from the C-series, engineered for high-frequency switching applications. This module features a robust design with a 1200V collector-emitter voltage rating and a continuous DC collector current of 600A at 60°C case temperature.
Key electrical characteristics include a total power dissipation of 3900W at 25°C case temperature and a gate-emitter peak voltage of ±20V. The module exhibits a typical collector-emitter saturation voltage of 3.20V at 600A and 25°C.
With a 62mm module size, the FZ600R12KS4 is suitable for various power electronic applications. Its fast switching capabilities are highlighted by low turn-on and turn-off delay times, as well as minimal rise and fall times, making it efficient for demanding inverter and high-frequency switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200V.
The continuous DC collector current is 600A at 60°C case temperature and 700A at 25°C case temperature.
The total power dissipation is 3900W at 25°C case temperature.
The typical gate threshold voltage is 5.5V.
The typical input capacitance is 39.0nF.
The typical thermal resistance from junction to case is 0.032 K/W.